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Structure And A Detailed Analysis Of Various Simulation Results Of Cntfet: A Review, Innovative Research Publications Irp India, Himanshu Gautam, Prateek Bindra
Structure And A Detailed Analysis Of Various Simulation Results Of Cntfet: A Review, Innovative Research Publications Irp India, Himanshu Gautam, Prateek Bindra
Innovative Research Publications IRP India
A detailed review on the Carbon Nanotube Filed Effect Transistors (CNTFETs) has been given. A little description about what are carbon nanotubes is also been covered. Various simulation results have also been included in this paper in order to provide better understanding about the carbon nanotubes field effect transistors.Characteristic Graphs of a C-CNTFET with n=10. m=11 (diameter=1.4246 nm) have been studied. Threshold voltage of CNTFETs vs n (for m=0) is also simulated. Equivalent high-frequency small-signal circuit model for a Nanotube transistor has also been analyzed. Also current voltage relationship of the CNTFET with respect to gate oxide thickness and dielectric …
Evaporative Vapor Deposition For Depositing 2d Materials, Kevin Gleason
Evaporative Vapor Deposition For Depositing 2d Materials, Kevin Gleason
Electronic Theses and Dissertations
The development of a new deposition technique called evaporative vapor deposition (EVD) is reported, allowing deposition and formation of atomically-thin, large area materials on arbitrary substrates. This work focuses on the highly popular monolayer material – graphene oxide (GO). A droplet of a GO solution is formed on a heated polymer substrate, and maintained at steady-state evaporation (all droplet parameters are held constant over time). The polymer substrate is laser patterned to control the droplet's contact line dynamics and the droplet's contact angle is maintained using a computer controlled syringe pump. A room temperature silicon wafer is translated through the …